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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU4530AW
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) *High Switching Speed
APPLICATIONS *Designed for use in horizontal deflection circuits of color TV rceivers and PC monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
VALUE 1500 800 7.5 16 40 10 15 125 150 -55~150
UNIT V V V A A A A W
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; IB= 0; L= 25mH IE= 1mA; IC= 0 IC= 10A ;IB= 2.22A IC= 10A ;IB= 2.22A VCEV=1500V,VBE(off)=0 VCEV=1500V,VBE(off)=0;TC=125 IC= 1A ; VCE= 5V IC= 10A ; VCE= 5V 4.8 MIN 800 7.5
BU4530AW
TYP.
MAX
UNIT V V
3.0 1.01 1.0 2.0 12 8.5
V V mA
Switching times; Resistive load Storage Time IC= 9A; IB1= 1.8A; IB2= -4.5A tf Fall Time 0.20 0.26 s 3.0 4.0 s
ts
isc Websitewww.iscsemi.cn


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